Dr. Hongliang Shi photo

Dr. Hongliang Shi

Silicon Carbide Application Director
Hunan Sanan Semiconductor Co., Ltd.

Biography

Dr. Shi Hongliang, Director of SiC Application of Hunan SANAN, is responsible for customer requirement introduction, system level application solutions, technical support and new product definition. He has 10+ years of R&D experience in system application design of SiC power devices, optimized design of high frequency high power magnetic devices, etc. He holds a PhD degree in Electrical Engineering from Tsinghua University.

Company Profile

Hunan Sanan Semiconductor Co., Ltd.

Company Profile

Sanan Semiconductor is a wholly-owned subsidiary of the listed company Sanan Optoelectronics. Sanan is committed to becoming a world-class R & D, manufacturing and service platform for wide bandgap semiconductors. Sanan Semiconductor extended Sanan Optoelectronics’ 20-year compound semiconductor industrialization experience to the field of power electronics, and became a full-chain integration platform focusing on the wide bandgap semiconductor industry and providing the most comprehensive products and services.

Product & Service

Sanan Semiconductor’s silicon carbide (SiC) power products include automotive and industrial SiC Schottky barrier diodes (SBD) and SiC MOSFETs which provide key components with higher power density and higher energy conversion efficiency for the electric vehicles and renewable energy markets. These can then be applied to high-reliability applications such as electric vehicle drivetrains, charging stations, and solar photovoltaic inverters. Sanan Semiconductor is a member of the JEDEC JC-70 Wide Band Gap Semiconductor Standards Committee, which collaborated with the industry to provide process technologies and products with improved reliability and quality. The company also has a portfolio of AEC-Q101 certified products.